Investigation of surface integrity in the case of chemical mechanical polishing silicon wafer by molecular dynamics simulation method

Abstract

With the development of semiconductor industry, the chemical mechanical polishing technology has already become the mainstream method of realizing the surface global flatness. In order to understanding physical essence underlying this technology, the author carried out nanometer polishing experiment of silicon wafer using molecular dynamics (MD) simulation method. The simulation result shows that using larger slurry grain can generate much more vacancy, dislocation and larger residual stress than using of small one although using larger slurry grain can acquire better surface quality. Keywords: Chemical mechanical polishing, molecular dynamics, silicon wafer, vacancy, dislocation. © 2006 Springer-Verlag Berlin/Heidelberg.