Skip to main content
Conference Proceedings

Silicon Surface Passivation by Al2O3 film using Atomic Layer Deposition

Environmental Science and Engineering (2014) 387-390
DOI: 10.1007/978-3-319-03002-9_97
0Citations
Citations of this article
2Readers
Mendeley users who have this article in their library.
Get full text

Abstract

Silicon surface passivation is studied using Al2O3 thin film deposited by thermal process using atomic layer deposition (ALD) method. Minority carrier lifetime measurements showed that the film passivate the silicon surface effectively. Capacitance-voltage measurement confirms the activation of negative fixed charges after sintering at 400ºC.

Author supplied keywords

Cite

CITATION STYLE

APA

Vandana, Batra, N., Gope, J., Rauthan, C. M. S., Sharma, M., Srivastava, R., … Singh, P. K. (2014). Silicon Surface Passivation by Al2O3 film using Atomic Layer Deposition. In Environmental Science and Engineering (pp. 387–390). Springer Science and Business Media Deutschland GmbH. https://doi.org/10.1007/978-3-319-03002-9_97

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free