Piezoresistive sensing of a dielectrically actuated silicon bar resonator

Abstract

This paper reports on a dielectrically actuated and piezoresistively sensed 4.41 GHz silicon bar resonator with an electromechanical Q (Qem) of 8180. The 2-port piezoresistive transconductance measurement performed provides a promising alternative to capacitive measurement at high frequencies, where nominal and feed-through capacitance often dominates the output signal. The electromechanical f·Q product of the silicon-based resonator is 3.6×1013 s-1, the highest reported to date for a silicon resonator using a direct 2-port measurement.