Enhanced photoluminescence from porous silicon nanowire arrays

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Abstract

The enhanced room-temperature photoluminescence of porous Si nanowire arrays and its mechanism are investigated. Over 4 orders of magnitude enhancement of light intensity is observed by tuning their nanostructures and surface modification. It is concluded that the localized states related to Si-O bonds and self-trapped excitations in the nanoporous structures are attributed to the strong light emission. © 2013 Zhang et al.

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Zhang, C., Li, C., Liu, Z., Zheng, J., Xue, C., Zuo, Y., … Wang, Q. (2013). Enhanced photoluminescence from porous silicon nanowire arrays. Nanoscale Research Letters, 8(1), 1–4. https://doi.org/10.1186/1556-276X-8-277

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