Recent progress in optoelectronic applications of hybrid 2D/3D silicon-based heterostructures

Abstract

Silicon-based semiconductor technology has made great breakthroughs in the past few decades, but it is reaching the physical limits of Moore’s law. In recent years, the presence of two-dimensional (2D) materials was regarded as an opportunity to break the limitation of traditional silicon-based optoelectronic devices owing to their special structure and superior properties. In consideration of the widely studied hybrid integration of 2D material detectors and 3D silicon-based systems, in this paper, the basic properties of several 2D materials used in photodetectors are summarized. Subsequently, the progress in silicon photonic integrated photo-detectors based on 2D materials is reviewed, followed by the summarization of the device structure and main performances. Then, the combination of some other traditional and 2D devices is discussed as a supplement. Finally, the prospective development of the hybrid 2D/3D silicon-based heterostructures is expected. [Figure not available: see fulltext.]