Organic–inorganic hybrid gate dielectric for solution-processed ZnO thin film transistors

Abstract

The preparation of a hybrid dielectric film was carried out by blending sol–gel-derived sodium beta alumina (SBA) and poly(4-vinylphenol) (PVP) to enhance the capacitance of a gate dielectric film. PVP-SBA was cured at a temperature sufficiently low enough to apply to a plastic substrate, while maintaining good electrical properties and uniformity. Addition of sol–gel-derived SBA improved the film density, resulting in good PVP-SBA thermal stability. The prepared PVP-SBA was used for high-performance aqueous solution-based ZnO transistors at 200 °C.