Magnetotransport and magnetization dynamics of GaMnAs thin films and magnetic tunnel junctions

Abstract

We describe the comprehensive characterization of GaMnAs epitaxial thin films and magnetic tunnel junctions (MTJ) by complementary techniques ranging from high-resolution imaging to magnetometry, magnetotransport, time-resolved magneto-optics, and coplanar broadband ferromagnetic resonance (FMR). Magnetometry and magnetotransport on macroscopic samples allow deriving the saturation magnetization and quasi-static reversal fields. Perpendicular transport experiments on patterned MTJ pillars further reveal the tunneling magnetoresistance ratio. Additionally the precessional dynamics are characterized by time-resolved magneto-optics and broadband network analyzer FMR yielding the effective Gilbert damping and the sample anisotropies. The combination of the different techniques allows a comprehensive characterization of the key magnetostatic and dynamic material parameters of GaMnAs-based thin films and devices.