Fabrication of a planar semiconductor microcavity, composed of cylindrical Bragg reflectors surrounding a radial defect, is demonstrated. A versatile polymer bonding process is used to transfer active InGaAsP resonators to a low-index transfer substrate. Vertical emission of in-plane modes lasing at telecom wavelengths is observed under pulsed optical excitation with a submilliwatt threshold. © 2004 American Institute of Physics.
CITATION STYLE
Green, W. M. J., Scheuer, J., Derose, G., & Yariv, A. (2004). Vertically emitting annular Bragg lasers using polymer epitaxial transfer. Applied Physics Letters, 85(17), 3669–3671. https://doi.org/10.1063/1.1807970
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