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UV-LED using p-type GaN/AlN supperlattice cladding layer

Physica Status Solidi C: Conferences (2002) (1) 34-38
DOI: 10.1002/pssc.200390060
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Abstract

GaN/AlN supperlattice was used as the p-type cladding layer of UV-LED. I-V characteristics indicates that UV-LED having GaN/AlN supperlattice has much lower series resistance than the conventional UV-LED in which ternary alloy AlGaN was used as the cladding layer. © 2002 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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APA

Iwaya, M., Terao, S., Takanami, S., Miyazaki, A., Kamiyama, S., Amano, H., & Akasaki, I. (2002). UV-LED using p-type GaN/AlN supperlattice cladding layer. In Physica Status Solidi C: Conferences (pp. 34–38). Wiley-VCH Verlag. https://doi.org/10.1002/pssc.200390060

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