High-Speed Terahertz Modulation Using Active Metamaterial

Abstract

This chapter covers a case study of metamaterial based terahertz modulator using embedded HEMT devices. A computational and experimental study of the terahertz (THz) device resulting from hybridization of metamaterials with pseudomorphic high electron mobility transistors (pHEMTs), fabricated in a commercial gallium arsenide (GaAs) process is presented. The principle of modulation introduced in Sect. 2.3is further elaborated with a detailed analysis of HEMT based modulation. The design and fabrication details of the device using a commercial Gallium-Arsenide (GaAs) process are covered next and finally the experimental methods and the results are discussed.