Investigation of charge collection in a CdTe-Timepix detector

Abstract

Energy calibration of CdTe detectors is usually done using known reference sources disregarding the exact amount of charge that is collected in the pixels. However, to compare detector and detector model the quantity of charge collected is needed. We characterize the charge collection in a CdTe detector comparing test pulses, measured data and an improved TCAD simulation model [1]. The 1 mm thick detector is bump-bonded to a TIMEPIX chip and operating in Time-over-Threshold (ToT) mode. The resistivity in the simulation was adjusted to match the detector properties setting a deep intrinsic donor level [2]. This way it is possible to adjust properties like trap concentration, electron/hole lifetime and mobility in the simulation characterizing the detector close to measured data cite [3]. © 2013 IOP Publishing Ltd and Sissa Medialab srl.