Hole mobility in the ultra-thin-body junctionless germanium-on-insulator p-channel metal-oxide-semiconductor field-effect transistors

Abstract

Junctionless Germanium-on-insulator (GOI) p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) have been realized with an ultra-thin-body (UTB) channel of down to 6 nm. The hole mobility of 166 cm2/V s has been realized at an Ns value of 1013 cm−2 attributable to the reduction of carrier scattering by interface traps under a bulk transport behavior for the devices. The back bias dependence of the hole mobility in junctionless UTB GOI pMOSFETs was examined; it is found that the hole mobility in the devices is dominated by the surface roughness scattering at the MOS interface.