Origin of the current discretization in deep reset states of an Al 2O3/Cu-based conductive-bridging memory, and impact on state level and variability

Abstract

In this paper, we develop a Quantum-Point-Contact (QPC) model describing the state conduction in a W/Al2O3/TiW/Cu Conductive-Bridging Memory cell (CBRAM). The model allows describing both the voltage- and the temperature-dependence of the conduction. For deep current levels, a resistance component is added in series to the point-contact constriction to account for electron scattering in the residual filament. The fitting of single-particle perturbation also allowed to estimate the number and effective size of the conduction-controlling particles in the QPC constriction. The results clearly point to smaller particles for CBRAM (Cu particles) as compared to oxide-based resistive RAM involving oxygen-vacancy defects, which is discussed as a possible origin of deeper reset level obtained in CBRAM. We also evidence a beneficial impact of this smaller particle size on lower Random-Telegraph-Noise amplitude measured on CBRAM devices. © 2014 AIP Publishing LLC.