Flash Memory—Formation, Development and Prospects

Abstract

The history of the emergence, the current state, as well as prospects for the development of flash memory is presented. The physical processes underlying the operation of flash memory, the varieties of its architecture are shown, the modern element base of flash memory is given. The main points are presented, such as the concept of flash memory, floating gate transistors, quantum mechanical Fowler—Nordheim effect (FN—tunneling), hot electron injection, a combination of these recording methods, their advantages and disadvantages, various NOR and NAND flash memory architectures and their combinations, cell varieties and bad block culling. Prospects of further development of flash memory are considered. Currently, attempts are being made to move from two-dimensional topology to three-dimensional. These developments allow the use of metal nanocrystals in the production of memory chips, without making almost any changes in the technological process. A material capable of doubling the capacity of conventional flash memory chips by adding self-forming metal nanocrystals to the production stage of chips by introducing a third dimension into the memory matrix has been developed. At this stage of development continues to dominate flash memory, the prospects of which is devoted to the article is given.