Luminescence properties of photonic crystal InGaN/GaN light emitting layers on silicon-on-insulator

Abstract

The photonic crystal InGaN/GaN light emitting diodes (LEDs) on thin silicon-on-insulator (SOI) substrates are demonstrated. Surface nanopatterning has been carried out on such LED layers and the processing conditions are varied to improve the outcoupling of visible emission. A substantial increase in the photoluminescence intensity is observed from LEDs on a thin SOI overlayer as compared to a similar structure grown on a thicker SOI. In addition, enhancement of the cathodoluminescence and electroluminescence intensity from such photonic crystal LEDs shows their potential in solid-state lighting. © 2010 The Electrochemical Society.