Abstract
Thin film nucleation from the vapor phase, the early stages of film growth, and microstructure evolution are reviewed for three-dimensional, two-dimensional, and Stranski-Krastanov growth systems. Computer simulations and direct experimental observations are used to describe the relationship between film growth parameters – including deposition rate, temperature, and low-energy ion irradiation – and film growth kinetics, microstructure development, and defect formation and annihilation rates.
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CITATION STYLE
Greene, J. E. (1993). Physics of Film Growth from the Vapor Phase. In Multicomponent and Multilayered Thin Films for Advanced Microtechnologies: Techniques, Fundamentals and Devices (pp. 39–85). Springer Netherlands. https://doi.org/10.1007/978-94-011-1727-2_3
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