Despite the importance of Si:P δ-doped wires for modern nanoelectronics, there are currently no computational models of electron transport in these devices. In this paper we present a nonequilibrium Green's function model for electronic transport in a δ-doped wire, which is described by a tight-binding Hamiltonian matrix within a single-band effective-mass approximation. We use this transport model to calculate the current-voltage characteristics of a number of δ-doped wires, achieving good agreement with experiment. To motivate our transport model we have performed density-functional calculations for a variety of δ-doped wires, each with different donor configurations. These calculations also allow us to accurately define the electronic extent of a δ-doped wire, which we find to be at least 4.6 nm.
CITATION STYLE
Smith, J. S., Drumm, D. W., Budi, A., Vaitkus, J. A., Cole, J. H., & Russo, S. P. (2015). Electronic transport in Si:P δ -doped wires. Physical Review B - Condensed Matter and Materials Physics, 92(23). https://doi.org/10.1103/PhysRevB.92.235420
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