Resistive switching behaviour in ZnO and VO2 memristors grown by pulsed laser deposition

Abstract

The resistive switching behaviour observed in microscale memristors based on laser ablated ZnO and VO2 is reported. A comparison between the two materials is reported against an active device size. The results show that devices up to 300 × 300 μm2 exhibit a memristive behaviour regardless of the device size, and 100 × 100 μm2 ZnO-based memristors have the best resistance off/on ratio. © The Institution of Engineering and Technology 2014.