Quantitative analysis for plasma etch modeling using optical emission spectroscopy: Prediction of plasma etch responses

Abstract

Monitoring of plasma etch processes for fault detection is one of the hallmark procedures in semiconductor manufacturing. Optical emission spectroscopy (OES) has been considered as a gold standard for modeling plasma etching processes for on-line diagnosis and monitoring. However, statistical quantitative methods for processing the OES data are still lacking. There is an urgent need for a statistical quantitative method to deal with high-dimensional OES data for improving the quality of etched wafers. Therefore, we propose a robust relevance vector machine (RRVM) for regression with statistical quantitative features for modeling etch rate and uniformity in plasma etch processes by using OES data. For effectively dealing with the OES data complexity, we identify seven statistical features for extraction from raw OES data by reducing the data dimensionality. The experimental results demonstrate that the proposed approach is more suitable for high-accuracy monitoring of plasma etch responses obtained from OES.