Abstract: Nanoscale Au-ZnO heterostructures were fabricated on 4-in. SiO2/Si wafers by the atomic layer deposition (ALD) technique. Developed Au-ZnO heterostructures after post-deposition annealing at 250 °C were tested for amperometric hydrogen peroxide (H2O2) detection. The surface morphology and nanostructure of Au-ZnO heterostructures were examined by field emission scanning electron microscopy (FE-SEM), Raman spectroscopy, atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), etc. Additionally, the electrochemical behavior of Au-ZnO heterostructures towards H2O2 sensing under various conditions is assessed by chronoamperometry and electrochemical impedance spectroscopy (EIS). The results showed that ALD-fabricated Au-ZnO heterostructures exhibited one of the highest sensitivities of 0.53 μA μM−1 cm−2, the widest linear H2O2 detection range of 1.0 μM–120 mM, a low limit of detection (LOD) of 0.78 μM, excellent selectivity under the normal operation conditions, and great long-term stability. Utilization of the ALD deposition method opens up a unique opportunity for the improvement of the various capabilities of the devices based on Au-ZnO heterostructures for amperometric detection of different chemicals. Graphical abstract: [Figure not available: see fulltext.].
CITATION STYLE
Xu, H., Wei, Z., Verpoort, F., Hu, J., & Zhuiykov, S. (2020). Nanoscale Au-ZnO Heterostructure Developed by Atomic Layer Deposition Towards Amperometric H2O2 Detection. Nanoscale Research Letters, 15(1). https://doi.org/10.1186/s11671-020-3273-7
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