The development of program for calculating the band gap energy of semiconductor material based on UV-Vis spectrum using delphi 7.0

Abstract

The optical properties of semiconductor material are the important information for its application in solar cell. One of the parameter which influence the material optical properties is the band gap energy. The value of band gap energy can be obtained from experimental data of UV-Vis absorbance spectrum by doing three steps, i.e. curve smoothing, baseline arrangement data value and the calculation of the band gap energy using Tauc plot method embedded in the Origin software. Conventionally, these three processes are done sequentially. In this research, we developed the program for calculating the band gap energy which differ from the one usually used. In this program all the processes for curve smoothing, baseline arrangement data value and the calculation of the band gap energy are done simultaneously. For input data, we used the experimental UV-Vis absorbance spectrum of ZnO, TiO2 sensitized-Dye and Dye-N719 materials. The calculated band energy obtained by our program are 3.19 eV, 2.14 eV and 1.73 eV for ZnO, TiO2+Dye N719and Dye-N719 materials, respectively. These results are almost the same to the one obtained by conventional method i.e. 3.20 eV for ZnO, 2.10 eV for TiO2 based Dye-sensitized and 1.60 eV for Dye-N719. We also found that our program for calculating the band gap energy is more easily, user friendly and more efficient compared to the conventional method.