Abstract
We exposed nitrogen-implanted diamonds to beams of swift uranium and gold ions (~1 GeV) and find that these irradiations lead directly to the formation of nitrogen vacancy (NV) centers, without thermal annealing. We compare the photoluminescence intensities of swift heavy ion activated NV- centers to those formed by irradiation with low-energy electrons and by thermal annealing. NV- yields from irradiations with swift heavy ions are 0.1 of yields from low energy electrons and 0.02 of yields from thermal annealing. We discuss possible mechanisms of NV-center formation by swift heavy ions such as electronic excitations and thermal spikes. While forming NV centers with low efficiency, swift heavy ions enable the formation of three dimensional NV- assemblies over relatively large distances of tens of micrometers. Further, our results show that NV-center formation is a local probe of (partial) lattice damage relaxation induced by electronic excitations from swift heavy ions in diamond.
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CITATION STYLE
Громов, А. Л., Губин, М. А., Иванов, С. В., & Маслихова, Р. И. (2017). Сравнительная характеристика диагностических возможностей критериев «Сепсис-1» и «Сепсис-3» у больных воспалительными заболеваниями челюстно-лицевой области. Курский Научно-Практический Вестник «Человек и Его Здоровье», (3), 66–71. https://doi.org/10.21626/vestnik/2017-3/11