Temperature dependence of exchange bias in Co/FeMn-structure induced by heating and cooling in magnetic field

Abstract

Using the method of angular dependence of ferromagnetic resonance field the magnetic properties of Si/SiO2/Cu/Co/FeMn/Cu and Si/SiO 2/Cu/Co/Cu/FeMn/Cu structures were investigated. The layer deposition was carried out by magnetron sputtering in absence of an external magnetic field. It was established that thermal annealing with further cooling down in presence of a magnetic field can generate an exchange bias at anneal temperature significantly below the bulk antiferromagnetic Néel temperature. It was also shown that a thin interlayer between ferromagnetic and antiferromagnetic layers reduces the exchange bias effect at low anneal temperatures, however, makes this effect more stable at high annealing temperatures.