OPTICAL MICROANALYSIS OF DEVICE MATERIALS AND STRUCTURES.

Abstract

A vast array of optical techniques has been applied to diagnostics of semiconductor materials. A partial list of techniques includes absorption, photoluminescence, Raman scattering, ellipsometry, and nonlinear optical measurements. Results for Raman measurements of stress in silicon-on-insulator and silicon-on-sapphire structures and for Raman measurements of thin crystalline Si films are discussed. Recent developments in surface photoacoustic spectroscopy which lead to a sensitivity to an absorbance of less than 2 multiplied by 10** minus **8 are also discussed.