Abstract
Self-consistent full-band Monte Carlo (with multi-subbands) device simulations were performed to clarify the mechanism of drain-current enhancements for uniaxially strained bulk Ge-pMOSFETs with different channel/surface orientations. Unlike any conventional mobility studies, our device simulation enables us to probe fundamental roles of source-injection and channel backscattering in the practical bulk-MOSFET device structures with optimized channel/surface selections.
Cite
CITATION STYLE
Takeda, H., Ikezawa, T., Kawada, M., & Hane, M. (2007). Strain induced drain-current enhancement mechanism in short-channel bulk Ge-pMOSFETs with different channel and surface orientations. In 2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007 (pp. 25–28). Springer-Verlag Wien. https://doi.org/10.1007/978-3-211-72861-1_6
Register to see more suggestions
Mendeley helps you to discover research relevant for your work.
