High power lpp-euv source with long collector mirror lifetime for semiconductor high volume manufacturing

Abstract

We have developed Pilot #1 system for HVM EUV lithography. Pilot#1 is up running and it demonstrates HVM capability. We achieved following performances at present; High conversion efficiency 4.5% is realized with Pre-pulse technology. High speed (>90 m/s) & small (20 micron) droplet is realized. High power CO2 laser power level is 20 kW. Output power 250 W in-burst power @50% duty (125 W average) several min. Pilot#1 system achieved potential of 89% availability (2 weeks) at 125 W average power.-0.6%/Gpls with 125 W average was demonstrated during 30 Mpls with mirror test. Furthermore, in 2018 ASML reported they succeeded 250 W operation with NXE3350 system achieved 125 WPH throughput not only in laboratory but also several customer site. Corresponding this situation, we have redefined the new target of EUV source power more than 330 W recently. We have already started feasibility study of higher conversion efficiency, higher driver laser power and improvement of capping layer of collector mirror. We will report the preliminary result of these.