Microstructural modification of nc-Si/SiO x films during plasma-enhanced chemical vapor deposition

Abstract

Nanocrystalline-silicon embedded silicon oxide films are prepared by plasma-enhanced chemical vapor deposition (PECVD) at 300°C without post-heat treatment. Measurements of XPS, IR, XRD, and HREM are performed. Microstructural modifications are found occurring throughout the film deposition. The silica network with a high oxide state is suggested to be formed directly under the abduction of the former deposited layer, rather than processing repeatedly from the original low-oxide state of silica. Nanocrystalline silicon particles with a size of 6-10 nm are embedded in the SiO x film matrix, indicating the potential application in Si-based optoelectronic integrity. © 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.