Abstract
We conduct a study of photoluminescence in a series of InAs quantum wells with asymmetric barriers that are designed to generate emission from intersubband transitions near 4 μm wavelength. The results show that optical pumping of the barrier layers can be used to transfer carriers into the upper electron state in the InAs wells to produce photoluminescence. © 2010 U.S. Government.
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CITATION STYLE
APA
Kaspi, R., Tilton, M. L., Dente, G. C., Barresi, R., Yang, C., & Ongstad, A. P. (2010). Intersubband photoluminescence in InAs quantum wells. Applied Physics Letters, 97(20). https://doi.org/10.1063/1.3516041
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