Effect of voltage divider layer on self-current compliance resistive switching in Ta/TaOx/ITO structure with an ultra-low power consumption

Abstract

Based on the Ta/TaOx/ITO structure, self-current compliance behavior in the resistive switching (RS) properties was investigated. The formation and rupture of metallic indium (In) conducting filaments (CFs), which contributes to the RS in this device, are confirmed by the variable temperature electrical test combined with X-ray photoelectron spectroscopy (XPS) analysis. It showed high uniformity and endurance performance up to 108 switching cycles, including a lower power consumption. The excellent electrical performance can be attributed to the role of a series resistor of ITO because the adverse effects of the voltage (or current) overshooting can be efficiently suppressed, resulting in the controllability of the In CF formation and rupture. The XPS depth profile results confirmed the oxygen exchange at the TaOx/ITO interface, combined with the Ohmic conduction mechanism at low resistance state, indicating that the ITO interface acts as the series resistor rather than the Schottky barrier.