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The Effect of Silane Treatment of AlxGa1−xN Surfaces

  • Ketteniss N
  • Kappers M
  • McAleese C
  • et al.
Springer Netherlands, (2008), 69-72
DOI: 10.1007/978-1-4020-8615-1_16
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Abstract

AlxGa1-xN epilayers grown by metal-organic vapour-phase epitaxy have been treated in situ, post-growth with silane and ammonia with the aim of increasing the size of the surface pits relating to threading dislocations, in order to allow easy quantification of the dislocation density. The treatment was Successful for relaxed samples, but resulted in the formation of nanoscale hillocks for epilayers under tensile strain.

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APA

Ketteniss, N., Kappers, M. J., McAleese, C., & Oliver, R. A. (2008). The Effect of Silane Treatment of AlxGa1−xN Surfaces. In Microscopy of Semiconducting Materials 2007 (pp. 69–72). Springer Netherlands. https://doi.org/10.1007/978-1-4020-8615-1_16

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