Critical review: Growth mechanisms of the self-assembling of silicon wires

Abstract

The unique characteristics of silicon (Si) wires strongly depend on the wire structure, which is dictated by the growth technique and mechanism. The in-depth understanding of the wire growth mechanism is the key to the commercial application of the growth technique. This article critically reviews the mechanisms governing the self-assembled growth of Si wires including (1) vapor-liquid-solid growth (in chemical vapor deposition and molecular beam epitaxy), (2) vapor-solid-solid growth (in chemical vapor deposition), (3) solvent-based growth (in supercritical-fluid-liquid-solid and solvent-liquid-solid process), and (4) solid-liquid-solid growth (in laser ablation, thermal evaporation, and thermal annealing). The morphology, orientation, defects, and the origins of the silicon wires are discussed. This article presents insights into the Si wire growth mechanisms, future research directions, and remaining barriers that must be overcome for commercial applications.