This paper presents the first results of our work to research and develop new reconfigurable circuits and topologies based on Magnetic RAM (MRAM) memory elements. This work proposes a coarse-grained reconfigurable array using MRAM. A coarse-grained array, where each reconfigurable element computes on 4-bit or larger input words, is more suitable to execute data-oriented algorithms and is more able to exploit large amounts of operation-level parallelism than common fine-grained architectures. The architecture is organized as a one-dimensional array of programmable ALU and the configuration bits are stored in MRAM. MRAM provide non-volatility with cell areas and with access speeds comparable to those of SRAM and with lower process complexity than FLASH memory. MRAM can also be efficiently organized as multi-context memories. © 2010 Springer Berlin Heidelberg.
CITATION STYLE
Silva, V., Fernandes, J., & Neto, H. (2010). Reconfigurable circuits using magnetic tunneling junction memories. IFIP Advances in Information and Communication Technology, 314, 549–558. https://doi.org/10.1007/978-3-642-11628-5_61
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