Abstract
We report the dependence of optical rectification and shift currents in unbiased GaAs(111) on the excitation beam polarization using THz emission spectroscopy. When exciting slightly above bandgap with elliptically polarized light, the emission is stronglyinfluenced by spin-polarized electrons.
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APA
Schleicher, J. M., Harrel, S. M., & Schmuttenmaer, C. A. (2009). Effect of Spin-Polarized Electrons on THz Emission from Photoexcited GaAs(111). In Springer Series in Chemical Physics (Vol. 92, pp. 648–650). Springer Science and Business Media Deutschland GmbH. https://doi.org/10.1007/978-3-540-95946-5_210
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