Growth and infrared switching properties of deposited VO2 films at various sputtering power with a VO2 target by RF magnetron sputtering

Abstract

In this work, structural and morphological properties as well as phase transition temperature and hysteresis width of VO2 thin films grown with a VO2 target by RF magnetron sputtering were studied under the influence of relatively low sputtering power of 80 - 140 W. It was observed that as sputtering power increased, the crystallinity of the films improved with the presence of obvious diffraction peaks of VO2, and a slight increase in the average crystallite and grain sizes of the films. The deposited films revealed a slight change in infrared transmittance during heating and cooling cycles. Films deposited at sputtering power of 140 W exhibited the lowest Tt of 60.5C with a hysteresis width of 41.0C.