The Effect of Gate Work Function and Electrode Gap on Wide Band-Gap Sn-Doped α-Ga2 O3 Metal–Semiconductor Field-Effect Transistors

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Abstract

We present technology computer aided design (TCAD) results for wide band-gap Sn-doped α-Ga2 O3 metal–semiconductor field-effect transistors (MESFETs). In particular, the effect of gate work function and electrode gap length on the electrical characteristics is demonstrated for a thorough understanding of the behavior of such devices. The gate work function significantly affects the reverse bias drain current under the gate-current dominant regime, whereas a gate-source/drain gap larger than 0.1 µm has a negligible effect on the drain current.

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Ro, H. S., Kang, S. H., & Jung, S. (2022). The Effect of Gate Work Function and Electrode Gap on Wide Band-Gap Sn-Doped α-Ga2 O3 Metal–Semiconductor Field-Effect Transistors. Materials, 15(3). https://doi.org/10.3390/ma15030913

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