Optical optimization of solar cells having extremely thin SnS layer on ZnO nanowires

Abstract

Use of non-toxic earth abundant materials is necessary for popularization of photovoltaic power generation. Here we have tried to optimize the dimensions of ZnO nanowires for maximum light absorption using Mie scattering. The light extinction was found maximum for ZnO nanowires of 140 nm. Approximations used for optimization and their validity have also been discussed. Here in this paper, formation of a semiconductor junction by depositing a thin layer of p type-SnS on n-type ZnO nanowires have also been reported.