2D Materials: C 3 N—A 2D Crystalline, Hole‐Free, Tunable‐Narrow‐Bandgap Semiconductor with Ferromagnetic Properties (Adv. Mater. 16/2017)

Abstract

A new 2D crystalline tunable-narrow-bandgap (0.39 eV) semiconductor, C3N, is developed for the first time, as reported by Guqiao Ding, Xiaoming Xie, Shuit-Tong Lee, Zhenhui Kang, and co-workers in article number 1605625. The bandgap tuning (2.74?1.57 eV) of C3N quantum dots is implemented by varying their size. Back-gated field-effect transistors made of single-layer C3N show an average ION/IOFF current ratio of 5.5 ? 1010. Strikingly, hydrogenated C3N (C3NH0.125) shows spontaneous magnetism.