Band gap engineering approaches to increase InGaN/GaN LED efficiency

Abstract

Nitride-based quantum well (QW) LEDs for lighting applications suffer from efficiency issues related to the strong built-in fields due to the difference in electric polarization of the constituent materials. In this paper we present a study based on device simulation showing the beneficial impact of band gap engineering approaches on device performance in particular for green LEDs. © Springer Science+Business Media, LLC. 2011.