High resolution structural characterisation of laser-induced defect clusters inside diamond

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Abstract

Laser writing with ultrashort pulses provides a potential route for the manufacture of three-dimensional wires, waveguides, and defects within diamond. We present a transmission electron microscopy study of the intrinsic structure of the laser modifications and reveal a complex distribution of defects. Electron energy loss spectroscopy indicates that the majority of the irradiated region remains as sp3 bonded diamond. Electrically conductive paths are attributed to the formation of multiple nano-scale, sp2-bonded graphitic wires and a network of strain-relieving micro-cracks.

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Salter, P. S., Booth, M. J., Courvoisier, A., Moran, D. A. J., & MacLaren, D. A. (2017). High resolution structural characterisation of laser-induced defect clusters inside diamond. Applied Physics Letters, 111(8). https://doi.org/10.1063/1.4993118

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