Narrow gap semiconductors (NGS) offer several scientifically unique features important for the field of spintronics. In order to explore these features we are using standard pump-probe and magneto-optical Kerr effect (MOKE) spectroscopy at different excitation wavelengths, power densities, and temperatures. Our goal is measuring and controlling carrier/spin relaxation in a series of InSb-based quantum wells and films, and InMnSb ferromagnetic films. The dynamic effects observed in these structures demonstrate strong dependence on the photo-induced carrier density.
CITATION STYLE
Khodaparast, G. A., Kini, R. N., Nontapot, K., Frazier, M., Wade, E. C., Heremans, J. J., … Furdyna, J. K. (2008). Control and Probe of Carrier and Spin Relaxations in InSb Based Structures. In Narrow Gap Semiconductors 2007 (pp. 15–18). Springer Netherlands. https://doi.org/10.1007/978-1-4020-8425-6_4
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