Melting Behavior of β-SiC at High Pressure

4Citations
Citations of this article
10Readers
Mendeley users who have this article in their library.

Abstract

The melting behavior of β -SiC with diamond structure was investigated under high pressures up to about 10 GPa using a flash-heating device. The peritectic temperature, at which the SiC decomposes into two phases of carbon saturated liquid Si and solid carbon (graphite) by a peritectic reaction, increases with pressure and the formation temperature of one liquid phase (l-SiC) also tends to increase with pressure. The solubility of carbon in liquid Si reach 50% at about 10 GPa and β -SiC melts directly into l-SiC. © 1998, The Japan Society of High Pressure Science and Technology. All rights reserved.

Cite

CITATION STYLE

APA

Togaya, M., & Sugiyama, S. (1998). Melting Behavior of β-SiC at High Pressure. Review of High Pressure Science and Technology/Koatsuryoku No Kagaku To Gijutsu, 7, 1037–1039. https://doi.org/10.4131/jshpreview.7.1037

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free