The melting behavior of β -SiC with diamond structure was investigated under high pressures up to about 10 GPa using a flash-heating device. The peritectic temperature, at which the SiC decomposes into two phases of carbon saturated liquid Si and solid carbon (graphite) by a peritectic reaction, increases with pressure and the formation temperature of one liquid phase (l-SiC) also tends to increase with pressure. The solubility of carbon in liquid Si reach 50% at about 10 GPa and β -SiC melts directly into l-SiC. © 1998, The Japan Society of High Pressure Science and Technology. All rights reserved.
CITATION STYLE
Togaya, M., & Sugiyama, S. (1998). Melting Behavior of β-SiC at High Pressure. Review of High Pressure Science and Technology/Koatsuryoku No Kagaku To Gijutsu, 7, 1037–1039. https://doi.org/10.4131/jshpreview.7.1037
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