Performance study of spin field-effect transistor based on cobalt-modified iron oxide ferromagnetic electrode

Abstract

Spintronics-based field-effect transistors (s-FET) are a new category of devices, which is an improvement over ordinary transistor by adding the properties of magnetoresistance. The conductivity of s-FET can be controlled by the spin degree of freedom of an electron, which results in extremely low power consumption and low heat dissipation. In the present work, a primary attempt is made to analyze the performance of s-FET designed on two-dimensional electron gas substrate. Superconducting quantum interference device (SQUID) is employed to analyze the magnetic properties of ferromagnetic contacts that cobalt-modified iron oxide. The role of spin polarization in the spin transport phenomenon of s-FET is also analyzed. It is proved that for the higher possible value of spin polarization, spin current also increases. For the value of spin polarization (p = 0.8), strong enhancement was observed in the spin current. The switching action in s-FET is checked as a function of gate voltage, and it shows a strong dependence on the gate voltage.