OSCILLATORY BEHAVIOUR OF THE HALL-FACTOR IN CROSSED ELECTRIC AND MAGNETIC FIELDS IN POLAR SEMICONDUCTORS.

Abstract

The Monte Carlo method is applied to calculate the Hall-factor (r//H ) for mobile electrons in polar semiconductors. It is found that at sufficient low temperature and for very pure semiconductors, r//H shows an oscillatory structure as a function of E/B, which is related to the transition from a regime with streaming electrons (r//H less than 1) to a regime with accumulated electrons (r//H greater than 1).