Structural and dielectric properties of TiO2 thin films deposited by the sol-gel method on Si substrates

Abstract

Titanium dioxide thin films with good dielectric properties were obtained on Si substrates using the sol-gel method. The metal oxide films were deposited by spin coating from sol solution and additionally annealed at 600 °C and 850 °C. XRD analysis, FTIR and Raman spectroscopy were used for revealing the film structure, the crystal phases and the formation of a polycrystalline material. The electrical measurements on metal-insulator-silicon (MIS) structures showed good dielectric properties. An optimal regime for high temperature annealing (850°C/15 min) was found, for which no effects related to the thermal instability of TiO2 film on Si were observed. The leakage current density of a 38-nm thick TiO2 film annealed at 850°C/15 min/O2 was approximately 1.95×10-9 A/cm 2 at 1.6×10-6 V/cm. © Published under licence by IOP Publishing Ltd.