Abstract
The carrier diffusion equation which retains the distributed nature of charge dynamics in power bipolar devices can be solved by means of an electrical analogy. This chapter presents the physical basis of the new modelling approach thus allowed, and its implementation in the case of IGBTs. © 2010 Springer Science+Business Media B.V.
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Austin, P., & Sanchez, J. L. (2010). Distributed modeling approach applied to the IGBT. In POWER/HVMOS Devices Compact Modeling (pp. 149–182). Springer Netherlands. https://doi.org/10.1007/978-90-481-3046-7_6
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