Damage formation, amorphization and crystallization in semiconductors at elevated temperatures

Abstract

This chapter focusses on damage build up, amorphization and crystallization processes in a range of semiconductors under irradiation conditions close to the critical temperature for amorphization where small changes in ion fluence, ion flux, ion mass and irradiation temperature have a strong effect on the damage level and nature of the residual disorder. Layer-by-layer amorphization (IBIIA) and ion-beam-induced epitaxial crystallization (IBIEC) phenomena are also highlighted as well as anomalous processes such as ion-induced swelling, porosity and surface erosion.