Abstract
This work reports on up to 2.9 μm lasing at 230 K of InP-based type-I quantum well lasers. This record long wavelength lasing is achieved by applying InP-based Sb-free structures with eight periods of strain-compensated InAs quantum wells grown on metamorphic In0.8Al0.2As template layers. The continuous-wave threshold current density is 797 A/cm2 and the idealized extrapolated threshold current density for infinite cavity length is as low as 58 A/cm2 per quantum well at 120 K. This scheme is a promising pathway for extending the wavelength range of type-I quantum well lasers on InP substrates.
Cite
CITATION STYLE
Gu, Y., Zhang, Y. G., Ma, Y. J., Zhou, L., Chen, X. Y., Xi, S. P., & Du, B. (2015). InP-based type-I quantum well lasers up to 2.9 μ m at 230 K in pulsed mode on a metamorphic buffer. Applied Physics Letters, 106(12). https://doi.org/10.1063/1.4916270
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