Physical Models for Resistive Switching Devices

Abstract

We present a classification and description of the principal resistive switching and transport mechanisms in chalcogonides materials. We classify the model according to how many material dimensions are involved in the resistive switching mechanism. In this way, we describe the phase change model (3D), the interface modulation model (2D) and models where the switching mechanism depends on the formation of a conduction filament (1D). Among the conduction filament models, we include the thermochemical oxygen diffusion mechanism, the oxidation/reduction mechanism and the quantum point effect.