High-performance HfOx/AlOy-based resistive switching memory cross-point array fabricated by atomic layer deposition

Abstract

Resistive switching memory cross-point arrays with TiN/HfOx/AlOy/Pt structure were fabricated. The bi-layered resistive switching films of 5-nm HfOx and 3-nm AlOy were deposited by atomic layer deposition (ALD). Excellent device performances such as low switching voltage, large resistance ratio, good cycle-to-cycle and device-to-device uniformity, and high yield were demonstrated in the fabricated 24 by 24 arrays. In addition, multi-level data storage capability and robust reliability characteristics were also presented. The achievements demonstrated the great potential of ALD-fabricated HfOx/AlOy bi-layers for the application of next-generation nonvolatile memory.