Abstract
It is demonstrated that planar structures based on silver nanoparticles hosted in a polymer matrix show reliable and reproducible switching properties attractive for non-volatile memory applications. These systems can be programmed between a low conductance (off-state) and high conductance (on-state) with an on/off ratio of 3 orders of magnitude, large retention times and good cycle endurance. The planar structure design offers a series of advantages discussed in this contribution, which make it an ideal tool to elucidate the resistive switching phenomena. © 2011 IFIP International Federation for Information Processing.
Author supplied keywords
Cite
CITATION STYLE
Kiazadeh, A., Rocha, P. R., Chen, Q., & Gomes, H. L. (2011). Resistive Random Access Memories (RRAMs) based on metal nanoparticles. In IFIP Advances in Information and Communication Technology (Vol. 349 AICT, pp. 591–595). https://doi.org/10.1007/978-3-642-19170-1_65
Register to see more suggestions
Mendeley helps you to discover research relevant for your work.
